მყარი დისკი Samsung MZ-77E1T0BW, SSD 870 EVO SSD 1TB SATA III 2,5"

Name: მყარი დისკი Samsung MZ-77E1T0BW, SSD 870 EVO SSD 1TB SATA III 2,5"
Brand: Samsung
SKU: 65893
Price: 306.05 GEL
Availability: InStock

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306.05 ₾

პროდუქტის კოდი: 65893

მწარმოებლის კოდი: MZ-77E1T0BW

მწარმოებელი: Samsung

რაოდენობა: 2 ერთეული

გარანტია: 12 თვე

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Brand: Samsung
Model: MZ-77E1T0BW
General Feature:
Application: Client PCs
Capacity: 1,000 GB (1 GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
Form Factor: 2.5 inch
Interface: SATA 6 Gb/s Interface, compatible with SATA 3 Gb/s & SATA 1.5 Gb/s interface
Dimension (WxHxD): 100 X 69.85 X 6.8 (mm)
Weight: Apporx. 45.0g Weight
Storage Memory: Samsung V-NAND 3bit MLC
Controller: Samsung MKX Controller
Cache Memory: Samsung 1 GB Low Power DDR4 SDRAM
Special Feature:
TRIM Support: TRIM Supported
S.M.A.R.T Support: S.M.A.R.T Supported
GC (Garbage Collection): Auto Garbage Collection Algorithm
Encryption Support: AES 256-bit Encryption (Class 0),TCG/Opal, IEEE1667 (Encrypted drive)
WWN Support: World Wide Name supported
Device Sleep Mode Support: Yes
Performance:
Sequential Read: Up to 560 MB/s Sequential Read * Performance may vary based on system hardware & configuration
Sequential Write: Up to 530 MB/s Sequential Write * Performance may vary based on system hardware & configuration ** Measured with Intelligent TurboWrite technology being activated
Random Read (4KB, QD32): Up to 98,000 IOPS Random Read * Performance may vary based on system hardware & configuration ** Measured with Intelligent TurboWrite technology being activated
Random Write (4KB, QD32): Up to 88,000 IOPS Random Write * Performance may vary based on system hardware & configuration ** Measured with Intelligent TurboWrite technology being activated
Random Read (4KB, QD1): Up to 13,000 IOPS Random Read * Performance may vary based on system hardware & configuration ** Measured with Intelligent TurboWrite technology being activated
Random Write (4KB, QD1): Up to 36,000 IOPS Random Write * Performance may vary based on system hardware & configuration ** Measured with Intelligent TurboWrite technology being activated
Environment:
Average Power Consumption (system level)
Average: 2.5 W *Maximum: 4.0 W (Burst mode)* Actual power consumption may vary depending on system hardware & configuration
Power consumption (Idle): Max. 30 mW * Actual power consumption may vary depending on system hardware & configuration
Allowable Voltage: 5V ± 5% Allowable voltage
Reliability (MTBF): 1.5 Million Hours Reliability (MTBF)
Operating Temperature: 0 - 70 ℃ Operating Temperature
Shock: 1,500 G & 0.5 ms (Half sine)