მყარი დისკი Samsung MZ-77E1T0BW, SSD 870 EVO SSD 1TB SATA III 2,5"

მყარი დისკი Samsung MZ-77E1T0BW, SSD 870 EVO SSD 1TB SATA III 2,5"

354.90 ₾
პროდუქტის კოდი:  65893
მწარმოებლის კოდი:  MZ-77E1T0BW
მწარმოებელი:   Samsung
რაოდენობა:  0 ერთეული
გარანტია:  12 თვე
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მიწოდება:
 

  • Brand: Samsung 
  • Model: MZ-77E1T0BW
  • General Feature:
  • Application: Client PCs
  • Capacity: 1,000 GB (1 GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
  • Form Factor: 2.5 inch
  • Interface: SATA 6 Gb/s Interface, compatible with SATA 3 Gb/s & SATA 1.5 Gb/s interface
  • Dimension (WxHxD): 100 X 69.85 X 6.8 (mm)
  • Weight: Apporx. 45.0g Weight 
  • Storage Memory: Samsung V-NAND 3bit MLC
  • Controller: Samsung MKX Controller
  • Cache Memory: Samsung 1 GB Low Power DDR4 SDRAM
  • Special Feature:
  • TRIM Support: TRIM Supported
  • S.M.A.R.T Support: S.M.A.R.T Supported
  • GC (Garbage Collection): Auto Garbage Collection Algorithm
  • Encryption Support: AES 256-bit Encryption (Class 0),TCG/Opal, IEEE1667 (Encrypted drive)
  • WWN Support: World Wide Name supported
  • Device Sleep Mode Support: Yes
  • Performance:
  • Sequential Read: Up to 560 MB/s Sequential Read * Performance may vary based on system hardware & configuration
  • Sequential Write: Up to 530 MB/s Sequential Write * Performance may vary based on system hardware & configuration ** Measured with Intelligent TurboWrite technology being activated 
  • Random Read (4KB, QD32): Up to 98,000 IOPS Random Read * Performance may vary based on system hardware & configuration ** Measured with Intelligent TurboWrite technology being activated 
  • Random Write (4KB, QD32): Up to 88,000 IOPS Random Write * Performance may vary based on system hardware & configuration ** Measured with Intelligent TurboWrite technology being activated
  • Random Read (4KB, QD1): Up to 13,000 IOPS Random Read * Performance may vary based on system hardware & configuration ** Measured with Intelligent TurboWrite technology being activated
  • Random Write (4KB, QD1): Up to 36,000 IOPS Random Write * Performance may vary based on system hardware & configuration ** Measured with Intelligent TurboWrite technology being activated
  • Environment:
  • Average Power Consumption (system level)
  • Average: 2.5 W *Maximum: 4.0 W (Burst mode)* Actual power consumption may vary depending on system hardware & configuration 
  • Power consumption (Idle): Max. 30 mW * Actual power consumption may vary depending on system hardware & configuration 
  • Allowable Voltage: 5V ± 5% Allowable voltage
  • Reliability (MTBF): 1.5 Million Hours Reliability (MTBF)
  • Operating Temperature: 0 - 70 ℃ Operating Temperature
  • Shock: 1,500 G & 0.5 ms (Half sine)
     
 

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